UAA326A04 HIEE300024R4 Embedded card ABB excitation system DCS
Brand ABB color standard Application Industrial height 386mm rated current 260mA
Protection Level IP45 Suitable for motor power 98KW Application Site Power Industry Material Code GJR2391500R1220 Power industry HIEE401782R0001 Part Number HIEE300024R4 UAA326A04
Applicable pipe 2 Whether imported is weighing 2.88 kg can be sold nationwide
UAA326A04 HIEE300024R4 Embedded card ABB excitation system DCS
HIEE300024R4 UAA326A04 ABB current injection technology optimizes switching transients of power supplies
The current injection technique studied in the Dr. HIEE300024R4 UAA326A04 publication optimizes switching transient diodes, semiconductor thyristors and insulated gate bipolar transistors (IGBTs) of power supplies without the need to change the structure of these devices. In order to implement the current injection technique, the current injection circuit has been developed, and the results show that injecting additional current during its switching transient can reduce the reverse recovery charge semiconductor thyristor for a given power diode, and reduce the tail current of the insulated gate bipolar transistor.
Practical experimental results for HIEE300024R4 UAA326A04 diodes and semiconductor thyristors show that the magnitude of the required injection current is proportional to the peak reverse recovery current and demonstrate that these devices experience an instantaneous increase in carrier recombination during the injection of additional current. This helps prevent the device from conducting a large negative current, thereby reducing its reverse recovery charge and reverse recovery time. The results obtained from the following experiments on insulated-gate bipolar transistors show a significant reduction in the time it takes for the current to drop to zero when the reverse current is injected into the device during its turn-off transient. Further simulation results from numerical simulations show that the injected reverse current temporarily increases the recombination and thus reduces the extracted excess carriers stored within the device.
To prevent circuit commutation and engagement of the device under test (DUT) between the current injection circuit and the main test circuit from being connected to, a non-invasive circuit was developed to magnetically couple the two circuits.
HIEE300024R4 UAA326A04 In summary, current injection technology makes it possible to use devices with low forward voltage drop in high-frequency applications. This also means cheaper device costs because fewer processing steps are required at the manufacturing stage, reducing the need for carrier lifetime control technology. This eliminates the need for semiconductor devices used in current injection circuits to have high breakdown voltage ratings, and also provides electrical isolation. Typical applications of this technique in inductive load chopper circuits show that the tail current significantly decreases in insulated gate bipolar transistors, as well as reverse recovery time and charge continuation diode second-hand.
UAA326A04 HIEE300024R4 Embedded card ABB excitation system DCS
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