5SHY35L4510 5SHY series ABB SCR IGCT card
5SHY35L4510 5SHY series ABB SCR IGCT card
Detailed information for: 5SHY35L4510
5SHY35L4510
General Information
Product ID:5SHY35L4510
ABB Type Designation:4500V 4000A
Catalog Description:Asymmetric Thyristor IGCT
Additional Information
ABB Type Designation:4500V 4000A
Country of Origin:Switzerland (CH)
Customs Tariff Number:8541300000
Frame Size:Spare_Parts
Gross Volume:3.114 dm³
Gross Weight:2.9 kg
Invoice Description:Asymmetric Thyristor IGCT
Made To Order:No
Medium Description:Asymmetric Integrated Gate-Commutated Thyristor
Minimum Order Quantity:1 piece
Order Multiple:1 piece
Package Level 1 Depth / Length:439 mm
Package Level 1 Gross Weight:2.9 kg
Package Level 1 Height:41 mm
Package Level 1 Units:1 piece
Package Level 1 Width:173 mm
Part Type:New
Product Name:Control System Accessory
Product Net Depth / Length:439 mm
Product Net Height:41 mm
Product Net Weight:2.9 kg
Product Net Width:173 mm
Product Type:Control_System_Accessory
Quote Only:No
Replaced Product ID (OLD):5SHY35L4510
Selling Unit of Measure:piece
Stocked At (Warehouses):Malmö, Sweden
Technical Information:Asymmetric Integrated GateCommutated Thyristor
Mounting force 40kN
High snubberless turn-off rating
Optimized for medium frequency
High electromagnetic immunity
Simple control interface with status feedback
AC or DC supply voltage
WEEE Category:Product Not in WEEE Scope

Article number 5SHY35L4510
Communication protocol ABB’s DriveBus
Master or slave Master
Transmission speed 8 Mbit/s
Line redundancy No
Module redundancy No
Hot Swap Yes
Used together with HI Controller No
Contact : Zoe
WhatsApp: +86-15359298206
Phone: +86-15359298206 (Wechat)
E-mail: 2641315943@qq.com
QQ : 2641315943
5SHY35L4510 5SHY series ABB SCR IGCT card SCR can be divided into spiral type, flat type and flat-bottomed type in terms of appearance, and spiral type is widely used. SCR has three electrodes – anode (A) cathode (C) and control electrode (G). It has a four-layer structure composed of P-type conductor and N-type conductor, and has three PN junctions. The structure of thyristor and silicon rectifier diode with only one PN junction is very different. The four-layer structure of silicon controlled rectifier and the use of control poles lay the foundation for its excellent control characteristics of “controlling large by small”. When applying silicon controlled rectifier, as long as a small current or voltage is applied to the control electrode, a large anode current or voltage can be controlled. Thyristor element with current capacity of hundreds of amperes to thousands of amperes. Generally, the SCR with less than 5 amperes is called low-power SCR, and the SCR with more than 50 amperes is called high-power SCR.
Voltage measurement method
5SHY35L4510 5SHY series ABB SCR IGCT card Why does SCR have the controllability of “controlling large by small”? Next, we will use Chart – 27 to briefly analyze the working principle of SCR.
5SHY35L4510 5SHY series ABB SCR IGCT card First of all, the first, second and third layers from the cathode up can be seen as one NPN transistor, while the second and third layers form another PNP transistor. The second and third layers are shared by two pipes. When a positive voltage Ea is applied between the anode and cathode, and a positive trigger signal is input between the control electrode G and the cathode C (equivalent to the base beam of BG1), BG1 will generate the base current Ib1. After amplification, one of BG1 will be amplified β One time of collector current IC1. Because BG1 collector is connected to BG2 base, IC1 is the base current Ib2 of BG2. BG2 magnifies the ratio of Ib2 (Ib1) β The collector current IC2 of 2 is sent back to the base of BG1 for amplification. In this way, the loop is amplified until BG1 and BG2 are fully connected. In fact, this process is a “trigger triggered” process. For the thyristor, the trigger signal is added to the control pole, and the thyristor is immediately turned on. The conduction time is mainly determined by the performance of thyristor.
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