5SHX0845F0001 3BHL000385P0101 ABB SCR IGCT card

5SHX0845F0001 3BHL000385P0101 ABB SCR IGCT card

Article number :5SHX0845F0001 3BHL000385P0101
Communication protocol ABB’s DriveBus
Master or slave Master
Transmission speed 8 Mbit/s
Line redundancy No
Module redundancy No
Hot Swap Yes
Used together with HI Controller No

Contact : Zoe
WhatsApp: +86-15359298206
Phone: +86-15359298206 （Wechat）
E-mail: 2851759107@qq.com
QQ : 2851759107

Silicon Controlled Rectifier (SCR) is a high-power electrical component, also known as thyristor. It has the advantages of small size, high efficiency and long service life. In the automatic control system, it can be used as a high-power driver to control high-power equipment with low-power controls. It has been widely used in AC and DC motor speed regulation system, power regulation system and servo system.

Thyristors are divided into unidirectional thyristor and bidirectional thyristor. Bidirectional thyristor is also called three-terminal bidirectional thyristor, or TRIAC for short. Bidirectional thyristor is structurally equivalent to the reverse connection of two unidirectional thyristor, which has the function of bidirectional conduction. Its on-off state is determined by the control pole G. Adding positive pulse (or negative pulse) to control pole G can make it conduct forward (or reverse). The advantage of this device is that the control circuit is simple and there is no reverse voltage withstand problem, so it is particularly suitable for use as an AC contactless switch.

 

structure

We use unidirectional thyristor, which is commonly known as ordinary thyristor. It is composed of four layers of semiconductor materials, with three PN junctions and three external electrodes (Figure 2 (a)): the electrode from the first layer of P-type semiconductor is called anode A, the electrode from the third layer of P-type semiconductor is called control electrode G, and the electrode from the fourth layer of N-type semiconductor is called cathode K. From the circuit symbol of the thyristor (Fig. 2 (b)), it can be seen that it is a unidirectional conductive device like the diode. The key is to add a control pole G, which makes it have completely different working characteristics from the diode.

The P1N1P2N2 four-layer three-terminal device with silicon single crystal as the basic material was started in 1957. Because its characteristics are similar to vacuum thyristors, it is generally known internationally as silicon thyristors, or thyristor T for short. Because the thyristor was originally used for static rectification, it is also called silicon controlled rectifier element, or SCR for short.

In terms of performance, silicon controlled rectifier not only has single-guide electricity, but also has more valuable controllability than silicon rectifier element (commonly known as “dead silicon”). It only has on and off states.

Thyristors can control high-power electromechanical equipment with milliampere current. If the power exceeds this power, the average current phase allowed to pass will be reduced due to the significant increase in switching loss of components. At this time, the nominal current should be degraded for use.

Thyristors have many advantages, such as controlling large power with small power, and the power amplification factor is up to hundreds of thousands of times; Very fast response, turn on and off in microseconds; No contact operation, no spark, no noise; High efficiency, low cost, etc.

Weakness of thyristor: poor static and dynamic overload capacity; Easy to be disturbed and misled.

Thyristors can be classified into bolt type, flat plate type and flat bottom type.

Structure of thyristor element

Regardless of the shape of silicon controlled rectifier, their tube core is a four-layer P1N1P2N2 structure composed of P-type silicon and N-type silicon. See Figure 1. It has three PN junctions (J1, J2, J3). The anode A is drawn from the P1 layer of the J1 structure, the cathode K is drawn from the N2 layer, and the control electrode G is drawn from the P2 layer. Therefore, it is a four-layer three-terminal semiconductor device.

Other relevant models

5SHX0360D0001 IGCT MODULE 38 MM/6KV, HL000384P0101, 3BHB004027R0101

5SHX0660F0001 3BHB003387R0101 GVC703AE01 3BHL00386P0101

5SHX0660F0002 3BHE022333R0101

5SHX06F6004 3BHB003387R0101/5SXE05-0151/3BHB003151P104

5SHX0845F0001 3BHL000385P0101 3BHB003387R0101 5SXE05-0151

5SHX1060H0001 3BHB003230R0101  3BHL000392P0101

5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101

5SHX10H6004

5SHX1445H0001 3BHL000391P0101

5SHX14H4502 3BHB003230R0101 5SXE05-0152 3BHB003023P201

5SHX1960L0004  3BHL000390P0104

5SHX2645L0002  3HB012961R0001

5SHX2645L0004  3BHL000389P0104

5SHX2645L0006  3BHB012961R0002

5SHY3545L0002  3BHE009681R0101  CVC750BE101

5SHY3545L0003 3BHB004692R001 , GVC732AE01 336A4954ARP1

5SHY3545L0005  3BHB004692R0001 336A4954ARP2   GVC732AE01

5SHY3545L0009  3BHE009681R0101 3BHB013085R0001 GVC750BE101

5SHY3545L0010  3BHB013088R0001 3BHE009681R0101 GVC750BE101

5SHY3545L0014

5SHY3545L0016  3BHB020720R0002

5SHY35L4520

5SHY4045L0004  3BHB021400R0002

5SHY4045L0006 3BHB030310R0001 3BHE039203R0101 GVC736CE101

5SHY5045L0020  AC10272001R0101  5SXE10-0181

5SHY5055L0002 3BHE019719R0101 GVC736BE101

5SHX1060H0003